Buried SiGe as a performance booster in n-channel FDSOI MOSFETs
Solid State Electronics
December 2019

Bulk n-channel MOSFETs with buried stressor at the 28 nm process node
Solid State Electronics,
April 2020;

Effective-mass theory of metal-semiconductor contact resistivity,
Applied Physics Letters,
August 2013;
Method and process flow for CMOS compatible photonics integration,
Phys. Status Solidi C,
May 2011

Fermi-level depinning for low-barrier Schottky source/drain transistors,
Applied Physics Letters,
January 2006

A new route to zero-barrier metal source/drain MOSFETs,
IEEE Transactions on Nanotechnology,
March 2004